The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Sep. 22, 1993
Gerald J Michon, Waterford, NY (US);
Harold W Tomlinson, Jr, Scotia, NY (US);
Jerome J Tiemann, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
An optical detection system includes an array of photodetectors, each of which is positioned for receiving light and converting the light into an electrical signal. A plurality of high pass filters is positioned with each one of the high pass filters electrically coupled to a respective photodetector for passing a portion of a respective electrical signal having frequency components at least as high as the high pass filter cutoff frequency. In one embodiment, each one of the filters comprises a capacitance coupled to the photodetector and a depletion mode FET with shorted gate-to-source terminals coupled between the photodetector and a bias voltage source. Each of the FETs comprises a silicon substrate, a silicon dioxide first insulative layer having a trench and a first conductive layer covering a portion of the first insulative layer including a portion of the trench, and each of the capacitances comprises the first conductive layer, a second insulative layer covering a portion of the first conductive layer, and a second conductive layer covering a portion of the second insulative layer.