The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Apr. 15, 1994
Makoto Kondo, Kawasaki, JP;
Akira Furuya, Kawasaki, JP;
Chikashi Anayama, Kawasaki, JP;
Mami Sugano, Kawasaki, JP;
Kay Domen, Kawasaki, JP;
Toshiyuki Tanahashi, Kawasaki, JP;
Hiroshi Sekiguchi, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.