The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Aug. 12, 1993
Applicant:
Inventor:
Chiara Zaccherini, Milan, IT;
Assignee:
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 27 ; 437 46 ; 437 60 ; 437918 ;
Abstract
A process for forming implanted regions with lowered channelling risk on semiconductors, wherein the semiconductor devices include at least one layer of polycrystalline silicon which covers all isolation regions and active areas which are liable to a channelling phenomena and wherein the process includes masking the areas or regions to be implanted on the polycrystalline layer, implanting a first dopant species having a high atomic weight to amorphousize the polycrystalline silicon in any unmasked areas, removing the masking layer, and implanting a second dopant species over the entire semiconductor.