The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Oct. 20, 1992
Kazuhito Furuya, Yokohama, JP;
Yasuyuki Miyamoto, Higashikurume, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
The present invention can precisely manufacture an X-ray mask pattern at intervals of less than 10 nm by using a thin film crystalline growth method, applying a laminated layer body of a fine structure having a precision of less than 1 atomic layer onto a substrate, and utilizing the difference in X-ray absorption coefficients. A method of manufacturing an X-ray exposure mask comprises the steps of alternately laminating two kinds of material consisting of a combination of a semiconductor, metal and insulator having substantially equal lattice constants and largely different coefficients of X-ray absorption on a substrate of a crystal body to thicknesses of less than 10 .ANG. by an epitaxial crystal growth method, and manufacturing a mask for exposing streak-like X-rays on a desired resist as a result of the largely different coefficients of X-ray absorption between each layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile