The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 1995
Filed:
Jun. 17, 1994
Ching-Yeu Wei, Schenectady, NY (US);
Roger S Salisbury, Schenectady, NY (US);
Robert F Kwasnick, Schenectady, NY (US);
Brian W Giambattista, Scotia, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.