The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1995
Filed:
Jun. 03, 1994
Tony T Phan, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An improved ion implantation system and method for placing dopant upon and within a semiconductor surface. The ion implantation system is capable of higher beam current by reducing dopant concentration across selected surface areas. Offsetting electrons are also diffused to maintain a lower net ion level at the selected areas. Amount of beam current can be increased according to user requirements to enhance throughput of the implantation process. Diffusion of ions and electrons is achieved by reconfiguring or redesigning an acceleration tube placed subsequent to the ion source. The acceleration tube comprises a plurality of electrodes spaced adjacent each other and extending as a pair of rows. Each row extends from a location proximal to the ion source to a location distal to the ion source. Sourcing a power supply upon a more distally located electrode allows the ions and/or electrons to diffuse outward from their acceleration path at a larger spot size upon the semiconductor surface.