The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1995
Filed:
Mar. 12, 1993
Applicant:
Inventor:
Theodore G Hollinger, Bend, OR (US);
Assignee:
Sundstrand Corporation, Rockford, IL (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 148D / ; 148D / ; 148D / ;
Abstract
A field-effect, power-MOS transistor wherein a region under the gate contact pad is specially doped with a dopant that is electrically compatible with that in the transistor's channel to obviate problems of electrical breakdown in that region.
Quick Actions:
Hollinger, Theodore. (1995). Method for controlling electrical breakdown in semiconductor power (U.S. Patent No. 5434095). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5434095
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile