The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 1995

Filed:

Apr. 26, 1994
Applicant:
Inventor:

Rakesh B Sethi, Campbell, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365218 ; 365185 ; 257315 ;
Abstract

An arrangement for reducing the erratic operation of a non-volatile memory cell caused by the accumulation of holes at a specific location within the cell during the electrical erasing of the cell includes a layer of hole confinement material positioned at the specific location the holes accumulate for containing the holes in a specific area. The arrangement also includes an arrangement for removing the holes from the containment area. A method of reducing the erratic operation of a non-volatile memory cell caused by the accumulation of holes at a specific location within the cell during the electrical erasing of the cell includes the step of providing a layer of hole confinement material positioned at the specific location the holes accumulate for containing the holes in the layer of hole confinement material.


Find Patent Forward Citations

Sethi, Rakesh. (1995). Non-volatile memory cell having hole confinement layer for reducing (U.S. Patent No. 5432749). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5432749

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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