The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Jan. 06, 1994
Keizo Ohtani, Kanagawa, JP;
Yamatake-Honeywell Co., Ltd., Tokyo, JP;
Abstract
A semiconductor pressure sensor includes a semiconductor substrate, a pressure detection gage, and a temperature detection gage. The semiconductor substrate has a thin portion formed in its central portion and a thick portion formed on an outer periphery of the thin portion. The pressure detection gage is formed on one surface of the thin portion of the semiconductor substrate and serves as a piezoelectric resistive region. The temperature detection gage is constituted by a piezoelectric resistive region formed by connecting a plurality of pairs of orthogonal minute line segments in a zigzag form. The two minute line segments of each pair are formed on a surface of the thick portion of the semiconductor substrate in crystallographic directions in which piezoelectric resistance coefficients are minimized.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile