The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
May. 19, 1994
Takahiro Hoshiko, Hyogo, JP;
Toshiaki Ogawa, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device having a substrate, a conductive layer formed on the substrate, an upper insulting film formed on the upper surface of the conductive layer and having a sectional shape with its width reduced upwardly, and a sidewall insulating film formed on the sidewall of the conductive layer and the upper insulating film having a sectional shape with its width reduced upwardly. The shape of the upper insulating film and, particularly, the sidewall insulating film prevent a polycrystalline silicon film formed on the upper insulating film and the sidewall insulating film from having a surface in the vertical direction relative to the substrate. Consequently, the disconnection of an upper layer interconnection can be effectively prevented, and miniaturization of elements can be achieved without forming fence-shaped residue when a conductive layer formed on the sidewall insulating film is anisotropically etched by plasma etching.