The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Mar. 09, 1993
Dae-Je Chin, Seoul, KR;
Chang-Hyun Kim, Seoul, KR;
SamSung Electronics Co., Ltd., Suwon, KR;
Abstract
There is disclosed a memory cell made with a semiconductor substrate for mounting integrated circuit elements, and having a trench for forming a capacitor region extending vertically to the surface of the substrate. In the substrate region around the trench is formed a cell plate region of second conductivity type for forming a charge storage region within the capacitor region. A high concentration semiconductor region of the same conductivity type as the substrate is formed in the substrate region outside the cell plate region to increase the charge stored in the capacitor region. A conducting material stores charge responding to the voltage given within the trench. A dielectric layer is formed between the conducting material and the cell plate.