The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Jan. 10, 1994
Applicant:
Inventors:
Didier Lippens, Villeneuve D'Ascq, FR;
Borge Vinter, Paris, FR;
Assignee:
Thomson-CSF, Puteaux, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257197 ; 257 14 ; 257 15 ; 257 17 ; 257183 ;
Abstract
The invention is a resonant tunnel effect quantum well transistor. To improve the gain by avoiding the storage of charges in the well, which consists of layer (14) with a narrow forbidden band and two barriers (13, 15) with a wide forbidden band, the quantum well is laterally bounded--in the plane of the layers--by a depleted region (22) which forms a quantum box whose dimensions are smaller than the De Broglie wavelength. Application to fast electronics (200 GHz).