The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Nov. 08, 1993
Applicant:
Inventor:
Kenko Taguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257186 ; 257184 ;
Abstract
An avalanche photodiode includes an avalanche multiplication layer including a superlattice structure consisting of a plurality of barrier and well layers both lattice matched to InP such that the plurality of barrier and well layers are alternately provided one layer on the other layer. The barrier layers consist of InAlAs and the well layers consist of InCaAlAs quarternary system mixed crystal having a forbidden width smaller than 1 eV.