The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Mar. 15, 1994
Tetsuo Sekiwa, Kanagawa, JP;
Junichi Fujiki, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Abstract
A semiconductor light-emitting device and a manufacturing method therefor by which deterioration of external output is sufficiently suppressed under the high temperature and moisture so as to significantly improve pellet yield. A light emitting device of a double hetero structure, includes: a first GaAlAs clad layer of a first conductivity type; an active layer formed on the first clad layer, the active layer having an appropriate AlAs mixed crystal ratio relative to a GaAs crystal so that an emitted light wavelength from the device is substantially between 620 and 940 nm; and a second GaAlAs clad layer of a second conductivity type formed on the active layer, wherein the AlAs mixed crystal ratio on the surface thereof in the second clad layer is equal to or less than 0.67, and a difference of the AlAs mixed crystal ratio between the bottom layer of the first clad layer and the top layer of the second clad layer is equal to or less than 0.3.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile