The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Aug. 29, 1994
Applicant:
Inventors:
Seok W Cho, Chungcheongbuk-do, KR;
Jong M Choi, Seoul, KR;
Assignee:
Goldstar Electron Co., Ltd, Chungcheengbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 21 ; 437 40 ; 437 44 ; 437915 ;
Abstract
A thin film transistor and a method which forms a channel region (c), a lightly doped drain region (LDD) region and, optionally, an offset region (o), in a portion of a semiconductor layer which is adjacent a sidewall of the gate electrode without the use of photo masks, thereby increasing the permissible degree of miniaturization and improving production yield.
Cho, Seok. (1995). Method of making thin film transistor with channel and drain adjacent (U.S. Patent No. 5432102). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5432102
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile