The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Dec. 17, 1992
Mitsushi Ikeda, Tokyo, JP;
Michio Murooka, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device, which comprises steps of providing a substrate, forming an oxide layer of a metal material, which includes a tantalum or an alloy mainly containing a tantalum on the substrate, placing the substrate into a first chamber, activating an etching gas which includes a fluorine containing gas and an oxygen containing gas, in a second chamber, introducing the activated etching gas into the second chamber, and etching the oxide layer by the introduced gas selectively against the substrate. A method of manufacturing a liquid crystal display device, which comprises steps of providing a substrate, forming an anodic oxide layer of a tantalum containing material on the substrate, forming an etching mask on the anodic oxide layer, placing the substrate into a first region, activating a mixture of fluorine and oxygen containing gas in a second region, apart from the first region, introducing the activated etching gas into the first region through a gas introducing portion, and etching the oxide layer on the substrate selectively against the substrate, by using the etching mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile