The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Jun. 14, 1991
Applicant:
Inventors:
Stephen Bachowski, Woburn, MA (US);
David F Bliss, Arlington, MA (US);
Robert M Hilton, Chelmsford, MO (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 17 ; 117 13 ;
Abstract
Twin-free (100) InP crystals of large dimensions and having flat crowns are produced by combining the magnetic liquid encapsulated Kyropoulos (MLEK) process and the magnetic liquid encapsulated Czochralski (MLEC) process. Observation of the flat crown by high intensity light ensures twin-free growth in the magnetic environment.
Bachowski, Stephen. (1995). Twin-free crystal growth of iii-v semiconductor material (U.S. Patent No. 5431125). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5431125
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile