The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 1995

Filed:

Jan. 18, 1994
Applicant:
Inventors:

Hiroshi Machida, Kumagaya, JP;

Tsuguo Fukuda, Sendai, JP;

Keigo Hoshikawa, Sendai, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 16 ; 117 23 ; 117209 ; 117937 ;
Abstract

A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.


Find Patent Forward Citations

Machida, Hiroshi. (1995). Rutile single crystals and their growth processes (U.S. Patent No. 5431124). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5431124

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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