The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Feb. 18, 1994
Gunther Zimmer, Duisburg, DE;
Jorg Eichholz, Duisburg, DE;
Wilfried Mokwa, Krefeld, DE;
Michael Kandler, Erestadt, DE;
Yiannakis Manoli, Mulheim, DE;
Abstract
A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).