The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1995
Filed:
May. 19, 1994
Applicant:
Inventors:
Richard P Fournel, La Fontanil, FR;
Francois Tailliet, Epinay sur Seine, FR;
Assignee:
SGS-Thomson Microelectronics, S.A., Gentilly, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H03K / ;
U.S. Cl.
CPC ...
257379 ; 257380 ; 257533 ; 331111 ;
Abstract
A resistor-capacitor-transistor type of integrated circuit comprises mainly a non-self-aligned N diffusion bar 1 covered with a polysilicon plate, and a drain type N diffusion, self-aligned by the polysilicon plate. The resulting structure is a distributed resistor-capacitor-transistor quadripole whose main characteristics are that it is very compact and that the time taken by the capacitor to get discharged through the transistor is independent of the dimensions of the structure.