The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1995
Filed:
Oct. 11, 1994
Applicant:
Inventor:
Vladimir Rumennik, Los Altos, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257331 ; 257332 ; 257333 ; 257334 ; 257403 ;
Abstract
A trench MOSFET that includes a charge carrier getter region to substantially deplete a plurality of body regions during an off-state of this MOSFET to produce a very low off-state leakage current. In a first class of embodiments, this charge carrier getter region is a thin layer of material, of opposite conductivity type to that of the body regions, and located between a plurality of gate regions and the body regions. In a second class of embodiments, the gate regions are of opposite conductivity type to the body regions to function as a charge carrier getter region as well as a gate region.