The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1995
Filed:
Jul. 21, 1994
Takahide Ishikawa, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a method of manufacturing a semiconductor device, a metal film including a metal element is formed on a wiring base layer by ion beam assisted CVD, more specifically, by selectively irradiating a region of the wiring base layer with a focused ion beam while blowing an organic metal gas containing the metal element onto the region irradiated by the ion beam. Thereafter, a low-resistance metal layer is formed on the metal film by electroless plating. Therefore, a metal wiring of low resistivity with a predetermined pattern is formed without a photolithographic process using a resist and also without sputtering or selective etching of the metal film. Consequently, manufacturing costs of a semiconductor device are significantly reduced.