The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1995
Filed:
Jul. 14, 1994
Applicant:
Inventor:
Hiroyuki Okada, Yokohama, JP;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437184 ; 437189 ; 437201 ; 437202 ;
Abstract
The present invention relates to an electrode forming process for forming an ohmic contact on a compound semiconductor crystal of a GaAs-based material having p-type conductivity. The process includes a first step of depositing a thin Pt layer having a thickness larger than 50 .ANG. on the compound semiconductor crystal, and a second step of depositing a Ti/Pt/Au electrode on the Pt layer.
Okada, Hiroyuki. (1995). Electrode forming process (U.S. Patent No. 5429986). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5429986
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile