The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Mar. 26, 1992
Yukimasa Uchida, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed is a memory having a p-type semiconductor substrate having a high impurity concentration a p-type semiconductor layer is formed on thereof; a groove which is formed so as to extend from a surface of the semiconductor layer to a position inside the semiconductor substrate; an impurity diffused region which is formed on portions of the semiconductor layer and the semiconductor substrate which define the groove; and an electrode which is formed from the groove to level at least above an opening of the groove through capacitor insulation film, the impurity diffused region, capacitor insulation film and electrode constituting trenched capacitor in which the electrode serves first capacitor electrode and the impurity diffused region serves as a second capacitor electrode.