The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Oct. 28, 1993
Applicant:
Inventors:
Kazuo Hayashi, Itami, JP;
Takuji Sonoda, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 25 ; 257 14 ; 257 24 ; 257280 ; 257282 ; 257283 ;
Abstract
A field effect transistor with improved operation speed and reduced noise includes a drain electrode disposed on a channel layer with a contact layer interposed therebetween, a source electrode, and a gate electrode disposed between the drain and source electrodes. A resonant tunneling diode is disposed between the source electrode and the channel region for supplying hot electrons to the channel layer beneath the gate electrode.