The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Jan. 06, 1994
Masao Yamada, Kawasaki, JP;
Motoo Nakano, Kawasaki, JP;
George J Collins, Fort Collins, CO (US);
Tetsuro Tamura, Kawasaki, JP;
Akira Takazawa, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An Si or SiC semiconductor layer is subjected to anodic oxidation in an HF solution to form a porous semiconductor layer. Without drying, the porous semiconductor layer is then immersed in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile