The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Apr. 18, 1990
Applicant:
Inventors:
Masahiro Shimizu, Hyogo, JP;
Katsuhiro Tsukamoto, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 60 ; 437186 ;
Abstract
A semiconductor device comprises a P-type semiconductor substrate having a major surface, an insulating film formed on the major surface of the semiconductor substrate, a first polycrystalline silicon layer formed on the insulating film, an n.sup.+ diffused layer formed on the substrate and adjacent to an end portion of the first polycrystalline silicon layer, and a side wall formed on the end portion of the first polycrystalline silicon layer and formed of a second polycrystalline silicon layer for connecting the end portion of the first polycrystalline silicon layer with the n.sup.+ diffused layer.