The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Aug. 15, 1994
Applicant:
Inventors:
Jagadeesh Pamulapati, Eatontown, NJ (US);
Hongen Shen, Howell, NJ (US);
Mitra Dutta, Matawan, NJ (US);
Assignee:
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
216 24 ; 216 99 ;
Abstract
Porous silicon is formed by patterning a single crystal silicon substrate prior to electrochemically etching the same. The process is a controlled method of fabricating silicon microstructures which exhibit luminescence and are useful in optoelectronic devices, such as light emitting diodes. The porous silicon produced has a high degree of uniformity and repeatability.
Quick Actions:
Pamulapati, Jagadeesh. (1995). Method of forming porous silicon (U.S. Patent No. 5427648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5427648
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