The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1995
Filed:
Jun. 06, 1994
Applicant:
Inventors:
Kimitsugu Saito, Kobe, JP;
Koichi Miyata, Kobe, JP;
Assignee:
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 88 ; 423446 ; 4234473 ;
Abstract
A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01.ltoreq.[C]/([C]+[O]).ltoreq.0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.