The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1995
Filed:
Apr. 21, 1994
Jun-ichi Nishizawa, Sendai, JP;
Sohbe Suzuki, Sendai, JP;
Zaidan Hojin Handotai Kenkyu Shinkokai, Miyagi, JP;
Abstract
A static induction thyristor has a first semiconductor area having a high impurity concentration of a first conductivity type. A second semiconductor area having low impurity concentration is formed adjacent to the first semiconductor area. A third semiconductor area having a high impurity concentration of a second conductivity type which is the conductivity type opposite to the first conductivity type is formed on a part of a surface of the second semiconductor area so located as to form a fourth semiconductor area located within the third semiconductor area. A fifth semiconductor area having a high impurity concentration of the first conductivity type is formed on the part of the surface of the second semiconductor area in spaced relation to the forth semiconductor area. An insulating film formed to cover at least a portion of a surface of the fifth semiconductor area and a least a portion of the surface of the second semiconductor area, which is put between the forth semiconductor area and the fifth semiconductor area. An insulated-gate control electrode is formed on the insulating film. The first and third semiconductor areas serve as a first and second main electrode areas, respectively.