The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1995
Filed:
Aug. 09, 1993
Applicant:
Inventors:
Jeffrey T Koze, Emmaus, PA (US);
Drew J Kuhn, Whitehall, PA (US);
John D LaBarre, Walnutport, PA (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
1566461 ; 437225 ;
Abstract
Perimeter material is removed from substrates by stacking the substrates and subjecting them to a plasma etch. In an exemplary application, the perimeter of a silicon wafer dielectric cap (typically silicon nitride) is removed by stacking the wafers in intimate contact, and etching the wafers in a barrel etcher. A well-controlled removal of the cap perimeter is obtained, allowing for a smooth epitaxial deposition at the water edge in a subsequent operation. An additional benefit is smoothing of the substrate edge contour, which reduces scratching of wafer cassettes and other handling equipment.