The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1995
Filed:
Oct. 24, 1994
Mutsumi Suzuki, Kanagawa, JP;
Nikon Corporation, Tokyo, JP;
Abstract
A lateral static induction transistor suited for use as a picture element of a solid state imaging device. The lateral static induction transistor includes a semiconductor substrate of a first conduction type of P type or N type, a first epitaxial layer of the same conduction type as the first conduction type which is formed on the semiconductor substrate, a second epitaxial layer of a second conduction type opposite to the first conduction type which is formed on the first epitaxial layer, a source zone and a plurality of drain zones which are formed in the second epitaxial layer near the surface thereof, and a plurality of gates each thereof being formed so as to partially lie over the source zone and one of the drain zones on the second epitaxial layer through an insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile