The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1995
Filed:
Apr. 11, 1994
Applicant:
Inventors:
Tuan A Vo, Hawthorne, CA (US);
Mohamad M Mojaradi, Los Angeles, CA (US);
Guillermo Lao, Hawthorne, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 30 ; 437 57 ; 437149 ; 257404 ; 257369 ;
Abstract
A FET which can be formed on a silicon substrate and which can operate in the enhancement mode. The n+ source and drain are centrally located within n-wells which extend under the gate area, and are separated by a distance. By appropriately choosing the distance between n-wells, different threshold voltages can be obtained for several transistors on the same chip.