The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1995
Filed:
Dec. 09, 1993
Stephen J Kovacic, Kanata, CA;
Northern Telecom Limited, Montreal, CA;
Abstract
A lateral bipolar transistor is provided in which the active base region comprises a layer of a material providing a predetermined valence band offset relative to the emitter and collector regions, to enhance transport of carriers from the emitter to the collector in a lateral manner. In particular, a silicon hetero-junction lateral bipolar transistor (HLBT) is provided. The lateral bipolar transistor structure and method of fabrication of the transistor is compatible with a bipolar-CMOS integrated circuit. Preferably the base region comprises a silicon-germanium alloy or a silicon-germanium superlattice structure comprising a series of alternating layers of silicon and silicon-germanium alloy.