The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1995
Filed:
Mar. 01, 1993
Applicant:
Inventor:
Gaku Ishii, Yokohama, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437184 ; 437192 ; 437246 ;
Abstract
A semiconductor device having a high productivity, a low resistance ohmic electrode, a high integration density, a low deterioration of a characteristic of each component and a high yield is provided. The ohmic contact of the semiconductor device has a structure of an AuGe/Ni alloy layer (27), a WSi layer (18c) and an Au layer (17d) sequentially laminated on a GaAs substrate (1). The flatness of the electrode is maintained by the WSi layer (18c) and the reduction of a resistance of the electrode is attained by the Au layer (17d ).