The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1995
Filed:
Sep. 30, 1993
Applicant:
Inventors:
Hans Weedon, Salem, MA (US);
Louis R Poulo, Andover, MA (US);
Ravindran Sundar, Wilmington, MA (US);
Mark R Jones, Wakefield, MA (US);
Ching T Lee, Chelmsford, MA (US);
Assignee:
Analogic Corporation, Peabody, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330251 ; 330269 ; 330276 ; 330277 ; 330295 ;
Abstract
Although known because of high packaging inductances and thought to be wholly unsuitable for RF amplifiers, high voltage power switching MOSFETs of the type having coplanar leads having inductances on the order of between 8 nH and 15 nH are used in an RF amplifier. The individual devices operate on a high impedance load line to render the high inductance insignificant. The circuit configuration presents a high impedance to the output, eliminating the need for expensive combiners and low inductance packaging.