The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1995
Filed:
Dec. 01, 1993
Applicant:
Inventors:
Kuo-Hua Lee, Both of Wescosville, PA (US);
Chun-Ting Liu, Both of Wescosville, PA (US);
Ruichen Liu, Warren, NJ (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437161 ; 437190 ; 437200 ; 437950 ;
Abstract
A field effect transistor is fabricated with an ion implanted silicide layer and a conducting diffusion barrier pad layer that acts as a diffusion mask. The dopants from the silicide layer are diffused into the substrate to form shallow source/drain regions.