The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 1995

Filed:

Jun. 30, 1994
Applicant:
Inventors:

Reid S Bennett, Albuquerque, NM (US);

Dennis S Yee, Pleasantville, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 41 ; 437 44 ; 437984 ; 148D / ;
Abstract

A self-aligned method of forming contacts to a transistor gate, source and drain reduces the required spacing between the nominal center of the gate and electrode at little cost in process complexity by the provision of a sidewall positioned above the LDD-defining sidewall and extending above the top Of the gate by a buffer amount sufficient to protect the gate during the process of opening a source or drain contact.


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