The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1995
Filed:
Jul. 18, 1994
Sun-jeong Choi, Suwon, KR;
Gang-ok Lee, Suwon, KR;
Samsung Display Devices Co., Ltd., Hwaseong-gun, KR;
Abstract
An FEA having a novel structure using an n.sup.+ shallow junction region, which operates with small voltages and increases emission current and a method for manufacturing the same. A tip is formed on a first conductive type semiconductor substrate, a first impurity region having a high impurity concentration is formed in the upper portion of the semiconductor substrate wherein first conductive type impurities are implanted, and a second conductive type second impurity region is formed in the surface of the semiconductor substrate around the tip and on the first impurity region. Also, a second conductive type shallow junction region is formed in the surface portion of the tip, an insulation layer including a pin hole which exposes the tip is formed on the semiconductor substrate, and a conductive layer having an opening corresponding to the pin hole of the insulation layer is formed on the insulation layer. When electrons are emitted by a tunneling effect, the required voltages to be applied are lowered. Since the tip can be manufactured by a self-aligned manner, the manufacturing process becomes simplified.