The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1995
Filed:
Dec. 20, 1993
Rick C Jerome, Monument, CO (US);
Ian R Post, Colorado Springs, CO (US);
Gary M Wodek, Colorado Springs, CO (US);
United Technologies Corporation, Hartford, CT (US);
Abstract
The present invention teaches a method and structure of enhancing the current gain characteristics of a bipolar junction transistor. The method comprises the step of forming a patterned silicon dioxide layer superjacent a semiconductor substrate comprising a base, an emitter and a collector, such that a carrier current conducts between the base and the emitter. The silicon dioxide layer forms an interface on the substrate at the emitter. Further, a first polysilicon layer is formed superjacent both the patterned silicon dioxide layer and the interface, and is implanted with O.sub.2. Subsequently, the substrate is heated such that the emitter interface is obstructed by a silicon dioxide formation, thereby blocking a portion of carrier current from passing through the interface.