The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 1995
Filed:
Sep. 09, 1993
Stephen D Russell, San Diego, CA (US);
Wadad B Dubbelday, Spring Valley, CA (US);
Randy L Shimabukuro, San Diego, CA (US);
Diane M Szaflarski, San Diego, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
This invention describes a method of controlling light emission from porous silicon and porous silicon devices using ion implantation. The emitted light intensity can be either selectively increased or decreased by suitable processing of the silicon prior to the fabrication of the porous layer. Amorphizing the silicon prior to the fabrication of the porous layer quenches the light emission. Ion implantation with doses below the amorphization level enhances the intensity of the emitted light of the subsequently fabricated porous layer.