The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 1995

Filed:

Nov. 27, 1991
Applicant:
Inventors:

Masami Miyazaki, Yokohama, JP;

Eiichi Ando, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428426 ; 428212 ; 428432 ; 428433 ; 428469 ; 428472 ; 428688 ; 428689 ; 428697 ; 428699 ; 428702 ; 359350 ; 359360 ; 359577 ; 359580 ; 359581 ; 359582 ; 359585 ; 359586 ;
Abstract

A low emissivity film formed on a substrate, which comprises a coating of oxide films and films whose major component is Ag alternately formed on the substrate in a total of (2n+1) layers where n is an integer being equal to or more than 1, with the innermost layer being an oxide film, wherein an integral width .beta.i(.degree.) of (111) diffraction line of a cubic Ag in an X-ray diffraction diagram of the low emissivity film exists in a first range of 180.lambda./(d.pi.cos.theta.).ltoreq..beta.i.ltoreq.180.pi./(d.pi.cos.thet a.)+0.15, where d(.ANG.) designates a thickness of a film whose major component is Ag, .pi.(.ANG.), a wave length of an X-ray for measurement and .theta., Bragg angle.


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