The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1995
Filed:
Jun. 07, 1994
Applicant:
Inventors:
John C Sardella, Highland Village, TX (US);
Alexander Kalnitsky, Dallas, TX (US);
Assignee:
SGS-Thomson Microelectronics, Inc., Carrollton, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257755 ; 257382 ; 257384 ; 257754 ;
Abstract
A conductive structure for an integrated circuit. An amorphous silicon layer overlies a silicide layer atop a conductive polycrystalline silicon structure. An insulating layer overlies the overall structure formed by the three layers. An opening through the insulating layer also extends through the amorphous silicon layer to expose a portion of the silicide layer. An upper interconnect layer extends through the insulating layer and the amorphous silicon layer to make contact with the silicide layer.