The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1995
Filed:
Aug. 10, 1993
Applicant:
Inventor:
Helmut Hertrich, Fahrenzhausen-Weng, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257401 ; 257139 ; 257490 ;
Abstract
A power MOSFET with improved avalanche resistance has a cell field in which the lateral cells are provided with source zones which are partly omitted or of a reduced size. The avalanche resistance is further improved in terms of reduced manufacturing cost in that a p-doped annular zone is disposed between the cell field and the edge of the semiconductor body. An annular trench is formed in the annular zone. The annular trench is contacted with the source metallization. The annular zone and the annular trench have the same depth as the gate zones of the cells and/or as the source contact holes.