The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1995
Filed:
Nov. 09, 1993
Yukio Watanabe, Machida, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
A field-effect transistor (FET) is described having a source; a drain; a channel formed between the source and the drain; and a gate electrode. The channel is composed of a film layer of oxide having the perovskite structure comprised of: (1) at least one metal selected from the group consisting of the metal elements in Group IV through Group XI of the Periodic Table of Elements and Bi; and (2) at least one metal selected from the group consisting of alkali metals, alkaline earth metals and rare earth metals. The layer has a film thickness of not larger than 1000 .ANG. and the electrical resistivity not less than 2 million centimeters. The channel of the oxide film layer is provided with a metal oxide insulator layer formed directly or through another metal oxide insulator layer and a gate electrode in electrical contact therewith. It is possible to make memories using this FET. In addition, it also becomes possible to reduce the size of devices using the FET of the invention.