The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1995
Filed:
Feb. 28, 1994
Isao Miyanaga, Moriguchi, JP;
Yasushi Okuda, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method of manufacturing semiconductor devices, which realizes miniaturization, a higher aspect ratio of a via hole, a higher yield and reliability, and a high degree of controllability, by completely filling the via hole by performing heat treatment on an electrically conductive thin film in a vacuum atmosphere. The method involves extending an electrically conductive layer into an electrically insulating layer arranged on the electrically conductive layer including the steps of forming an electrically conductive film on a side wall of a via hole extending in the electrically insulating layer from the electrically conductive layer toward the outside of the electrically insulating layer, and heating the electrically conductive film and the electrically conductive layer so that the electrically conductive film flows into the via hole and the electrically conductive layer projects into the via hole.