The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 1995

Filed:

Jul. 28, 1993
Applicant:
Inventors:

Tohru Ishizuya, Yokohama, JP;

Masahiro Shoda, Gyouda, JP;

Keiichi Akagawa, Kamakura, JP;

Assignee:

Nikon Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257228 ; 257245 ; 257247 ; 257229 ; 257436 ;
Abstract

A solid state imaging device which reduces the occurrence of crosstalk between a plurality of picture elements arranged in a linear or matrix form. The solid state imaging device includes a plurality of photosensitive cells formed on a first principal surface of a semiconductor substrate, a transfer electrode formed in a gap area among the cells on the first principal surface to read out charges produced in the cells, a drive metal wiring formed on the transfer electrode within the gap area, a first insulating film covering the cells with a predetermined thickness, and a plurality of metal reflecting films formed on the first insulating film in such a manner that the whole surface of each of the metal reflecting films forms a reflecting surface substantially parallel to a surface of each of the cells on the side of the first principal surface whereby light passed through the photosensitive cells from a side opposite to the first principal surface is reflected back to each of the photosensitive cells.


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