The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 1995
Filed:
Dec. 27, 1993
Applicant:
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
505237 ; 428688 ; 428689 ; 428930 ; 505235 ; 505701 ; 505236 ; 505238 ; 505239 ;
Abstract
A thin film of oxide superconductor deposited on a single crystal substrate of silicon wafer. A buffer layer of (100) or (110) oriented Ln.sub.2 O.sub.3, in which Ln stands for Y or lanthanide elements is interposed between the thin film of oxide superconductor and the silicon wafer. A surface of silicon wafer is preferably cleaned satisfactorily by heat-treatment in vacuum before the buffer layer is deposited. An under-layer of metal oxide; ZrO.sub.2, YSZ or metal Y, Er is preferably interposed between the Ln.sub.2 O.sub.3 buffer layer and the silicon wafer.