The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 1995

Filed:

Nov. 15, 1993
Applicant:
Inventors:

Edward A Beam, III, Dallas, TX (US);

Alan C Seabaugh, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 60 ; 437 51 ; 437904 ; 437915 ; 437133 ;
Abstract

This is an integrated device which comprises an integrated transistor and resonant tunneling diode where the transistor comprises a substance 10, a buffer layer layer 12 over the substrate 10, and a channel layer 14 over the buffer 12; and the resonant tunneling diode (RTD) comprises a first contact layer 18, a first tunnel barrier layer 20 over the first contact layer 18, a quantum well 22 over the first tunnel barrier layer 20, a second tunnel barrier layer 24 over the quantum well 22, and a second contact layer 26 over the second tunnel barrier layer 24. Other devices and methods are also disclosed.


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Beam, III, Edward. (1995). Method of making an integrated field effect transistor and resonant (U.S. Patent No. 5416040). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5416040

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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