The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1995
Filed:
Sep. 03, 1993
Makoto Ihara, Sakurai, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor memory device is disclosed. The semiconductor memory device includes: memory cells for storing data; bit-line pairs connected to the memory cells; a bit-line precharge signal generating circuit for generating bit-line precharge signals in order to precharge the bit-line pairs to a prescribed potential; switching-element pairs for electrically connecting the bit-line pairs to data-line pairs; and column decoders each applying a column select signal to the corresponding switching-element pair in accordance with column addresses to be input. In the semiconductor memory device, a condition of V.sub.P .ltoreq.V.sub.A .ltoreq.V.sub.p +V.sub.T is substantially satisfied, where V.sub.P represents the prescribed potential to which the bit-line pairs are precharged in accordance with the bit-line precharge signals generated by the bit-line precharge signal generating circuit, V.sub.T represents a threshold voltage of each of the switching-element pairs, and V.sub.A represents a potential of the column select signal in an active state.